Surface-tunneling-induced 1/ f noise in Hg1− x Cd x Te photodiodes
1983; American Institute of Physics; Volume: 1; Issue: 3 Linguagem: Inglês
10.1116/1.572213
ISSN1520-8559
AutoresWilliam W. Anderson, Hanna J. Hoffman,
Tópico(s)Advanced Optical Sensing Technologies
ResumoThe reverse bias dark curent of Hg1−xCdxTe (MCT) photodiodes is often dominated by tunneling across a pinched off surface depletion region. The width of this critical region may be modulated by charge exchange with slow surface states in a passivant insulator. Numerical calculations give the correct order of magnitude for observed 1/ f noise in ZnS passivated MCT photodiodes.
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