Magnetization reversal of Nd(Dy)–Fe–B thin films on Si(111) or Ta/Si(111)
1998; American Institute of Physics; Volume: 83; Issue: 11 Linguagem: Inglês
10.1063/1.367770
ISSN1520-8850
AutoresJai-Lin Tsai, T.S. Chin, Efrem Y. Huang, S. K. Chen,
Tópico(s)Magnetic Properties and Applications
ResumoNd(Dy)–Fe–B films were prepared by dc magnetron sputtering on a Si(111) wafer with or without a Ta underlayer. The reversal magnetization process of Nd–Fe–B/Ta bilayer was found to be dominated by nucleation control model with the magnetic inhomogeneity coefficient αk=0.32 defined by Kronmuller’s formulation of micromagnetic theory. But the coercivity mechanism of Nd(Dy)–Fe–B single layer was fitted well to domain wall pinning behavior. The range factor (half width between pinning sites) r0 is equal to 6.9 nm as r0>δB, the width of the domain wall. The magnetization phenomena of the two films are also manifest from initial magnetization curves.
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