DIELECTRIC PROPERTIES OF WURTZITE AND ZINCBLENDE STRUCTURE GALLIUM NITRIDE
1997; Elsevier BV; Volume: 58; Issue: 6 Linguagem: Inglês
10.1016/s0022-3697(96)00219-3
ISSN1879-2553
AutoresR. Wang, P. P. Ruden, J. Kolník, İsmail H. Oğuzman, KF. BRENNAN,
Tópico(s)Semiconductor materials and devices
ResumoWe present calculated results for the wavevector and frequency dependent dielectric functions of zincblende and wurtzite GaN based on empirical pseudopotential band structures. The q→-dependent static dielectric functions, ϵ∞(q→), are found to be similar for the two crystal modifications. The optical dielectric functions, ϵ∞(ω), however, are different in the range 6 eV < ℏω < 12 eV. We also evaluate the indices of refraction in the frequency range near the fundamental bandgaps and the absorption coefficients above the bandgaps for both modifications of GaN. The results are in good agreement with experimental data. The birefringence of wurtzite GaN is briefly discussed. © 1997 Elsevier Science Ltd
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