Portal de Periódicos da CAPES

Model for oxygen recombination on silicon-dioxide surfaces

1991; American Institute of Aeronautics and Astronautics; Volume: 5; Issue: 3 Linguagem: Inglês

10.2514/3.262

1533-6808

W. A. Seward, Eric Jumper,

Silicone and Siloxane Chemistry

This paper addresses the problem of modeling the catalytic recombination of oxygen on silicon dioxide, the principal material making up the Space Shuttle thermal protection tiles. A new mechanism involving the surface oxygen of the silicon-dioxide matrix itself is proposed. The detailed rate equations describing the proposed mechanism are written and solved at steady state. The predicted rates are shown to match catalytic data specifically collected for the silicon-dioxide/oxygen system.