Field Emission of a Single In-Doped ZnO Nanowire
2007; American Chemical Society; Volume: 111; Issue: 26 Linguagem: Inglês
10.1021/jp0666030
ISSN1932-7455
AutoresYunhua Huang, Yue Zhang, Yousong Gu, Xuedong Bai, Junjie Qi, Qingliang Liao, Juan Liu,
Tópico(s)Ga2O3 and related materials
ResumoIn-doped ZnO nanowires were successfully fabricated by thermal evaporation of a powder mixture of Zn, In2O3, and graphite. Field emission of individual In-doped and pure ZnO nanowire was observed in situ by a transmission electron microscopy. The results show that In-doped ZnO nanowires showed an enhanced field emission properties. First-principle density functional calculations were performed to calculate the electronic structure of the In-doped and pure ZnO in order to explain the observed field emission properties. A two-band field emission mechanics was proposed to explain the enhanced field emission from n-type doping.
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