Cyclotron-Resonance-Induced Nonequilibrium Phase Transition in n -GaAs
1985; American Physical Society; Volume: 55; Issue: 7 Linguagem: Inglês
10.1103/physrevlett.55.754
ISSN1092-0145
AutoresM. Weispfenning, I. Hoeser, Walter Böhm, W. Prettl, Eckehard Schöll,
Tópico(s)stochastic dynamics and bifurcation
ResumoA thresholdlike behavior of the far-infrared photoconductivity due to cyclotron resonance and a drastic deviation of the cyclotron-resonance line shape from a Lorentzian has been observed in $n$-GaAs at low temperatures by applying a high-power cw far-infrared laser. Both effects may consistently be explained in terms of generation-recombination-induced nonequilibrium phase transitions showing that, besides impact ionization of impurities, cyclotron resonance can critically control the conductivity of the semiconductors.
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