Defect-assisted resonant tunneling: A theoretical model
1992; American Institute of Physics; Volume: 61; Issue: 13 Linguagem: Inglês
10.1063/1.107503
ISSN1520-8842
AutoresD. Stiévenard, Xavier Letartre, M. Lannoo,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoDefects are often taken as the cause of deviations in the current-voltage characteristics of heterostructures such as barrier or double barrier, and the so-called defect-assisted tunneling effect has been assumed to occur in certain cases. We present an analytical analysis of the tunneling effect which occurs through a barrier and which is assisted by an energy level associated with a defect. Moreover, we show that a negative differential resistance can occur using a single barrier in which a defect is located.
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