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Trigate TiN Nanocrystal Memory with High-k Blocking Dielectric and High Work Function Gate Electrode

2009; Electrochemical Society; Volume: 12; Issue: 3 Linguagem: Inglês

10.1149/1.3054304

1944-8775

Chi-Pei Lu, Bing‐Yue Tsui, Cheng-Kei Luo, Cha-Hsin Lin, Pei-Jer Tzeng, Ching-Chiun Wang, Ming-Jinn Tsai,

Ferroelectric and Negative Capacitance Devices

In this work, high-performance TiN metal nanocrystal nonvolatile memories using a poly-Si gate and a blocking dielectric layer with trigate structure are fabricated on silicon-on-insulator substrate. Devices with moderate transistor performance and superior memory properties are demonstrated. A memory window as high as is achieved after Program/Ease (P/E) operation at for , with only 18 and 33% charge loss at room temperature and at after storage. Only window shift and almost no window narrowing after P/E operations can be obtained. Furthermore, a device with larger nanocrystals has better P/E characteristics and superior retention performance.