Enhanced light extraction efficiency in flip-chip GaN light-emitting diodes with diffuse Ag reflector on nanotextured indium-tin oxide
2008; American Institute of Physics; Volume: 93; Issue: 2 Linguagem: Inglês
10.1063/1.2953174
ISSN1520-8842
AutoresJa‐Yeon Kim, Min‐Ki Kwon, Il‐Kyu Park, Chu‐Young Cho, Seong-Ju Park, Dong-Min Jeon, Je Won Kim, Yong-Chun Kim,
Tópico(s)Nanowire Synthesis and Applications
ResumoWe investigated a flip-chip light emitting diode (FCLED) with a diffuse reflector fabricated by depositing a Ag film on a nanotextured indium-tin oxide (ITO) layer. The FCLED with a diffuse Ag reflector showed remarkably good adhesion and high reflectance than that with a specular Ag reflector deposited on the planar ITO layer. The optical output power of FCLED with the diffuse Ag reflector was enhanced by 161.3% at 300mA compared to that with the specular Ag reflector.
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