Double gate GaInZnO thin film transistors
2008; American Institute of Physics; Volume: 93; Issue: 6 Linguagem: Inglês
10.1063/1.2967456
ISSN1520-8842
AutoresHyuck Lim, Huaxiang Yin, Jin‐Seong Park, Ihun Song, Changjung Kim, JaeChul Park, Sunil Kim, Sang‐Wook Kim, Chang Bum Lee, Yong C. Kim, Young Soo Park, Donghun Kang,
Tópico(s)Semiconductor materials and devices
ResumoWe fabricated gallium-indium-zinc oxide (GIZO) thin film transistors (TFTs) having a double-gated (DG) structure and studied the back gate effect on device performance. DG GIZO TFTs showed better threshold voltage (Vth), swing factor (S), and on/off current than those with a single gate. With the variation in back gate bias, the device performance significantly changes due to the modification of field distribution near the GIZO channel. It is believed that our DG structure is an effective way to improve the performance of GIZO oxide transistors and suppress the formation of an accumulation layer at the back surface.
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