Picosecond photoconductivity in radiation-damaged silicon-on-sapphire films
1981; American Institute of Physics; Volume: 38; Issue: 1 Linguagem: Inglês
10.1063/1.92128
ISSN1520-8842
AutoresP. R. Smith, D. H. Auston, Anthony Johnson, W. M. Augustyniak,
Tópico(s)Silicon and Solar Cell Technologies
ResumoRadiation damage caused by ion implantation is used to control the carrier lifetime in silicon-on-sapphire (SOS) films. Photoconductivity measurements show the relaxation time changes by several orders of magnitude and can be as short as 8 ps. The carrier mobility is found to be at least an order of magnitude higher than amorphous silicon materials with similar relaxation times. A photodetector is described that demonstrates the high-speed capability of these high-defect-density films.
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