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Very low energy nitrogen implantation for ultrathin silicon oxynitride film formation

1999; Elsevier BV; Volume: 148; Issue: 1-4 Linguagem: Inglês

10.1016/s0168-583x(98)00829-5

1872-9584

Tânia Denise Miskinis Salgado, F. C. Stedile, C. Krug, I. J. R. Baumvol, C. Radtke,

Thin-Film Transistor Technologies

We investigated the influence of the surface concentration of N (in the range 1/30–1 monolayer) on the thermal growth rate of silicon oxide films. Very low energy (20 eV) 15N+ ions were implanted onto Si(1 0 0) substrates and thermal oxidations were performed in 18O2. In some samples N deposition was performed on an 8 nm thick 29Si layer also deposited by low energy ion implantation on natural Si. The amounts of N and O in the films were determined by Nuclear Reaction Analysis (NRA), and the N, O, and Si profiles were determined with nanometric depth resolution by narrow nuclear resonance profiling. A progressive reduction of the oxidation rate with the increase of the areal density of N was observed. Isotopic tracing revealed the details of the redistribution of N in the films and its effects on the mechanisms of thermal growth of the dielectric layer.