Portal de Periódicos da CAPES

InGaAsP/InP wavelength-selective heterojunction phototransistors

1984; Institute of Electrical and Electronics Engineers; Volume: 31; Issue: 6 Linguagem: Inglês

10.1109/t-ed.1984.21612

1557-9646

Tsuneo Mitsuyu, Shizυo Fujita, Akio Sasaki,

Photonic and Optical Devices

High-gain phototransistors with narrow spectral response (wavelength-selective phototransistors) have been developed by adding an absorption layer to a wide-bandgap heterojunction phototransistor using the InGaAsP/InP material system. The spectral response peaks at approximately 1.2 µm and the spectral half-width of 53 nm is achieved. This device exhibited an optical gain as high as 400 at the peak wavelength under an incident light power P in of 3.6 µW. The rise time was measured to be 18 µs at P in = 10 µW. The noise characteristic was also measured for this device, and the resultant detectivity D * was estimated to be 3.7 × 10 10 cm . Hz 1/2 /W at a frequency of 2 kHz under an optical bias level of 0.1 µW. These characteristics have been theoretically discussed in detail.