15% efficiency (1 sun, air mass 1.5), large-area, 1.93 eV Al x Ga1− x As ( x =0.37) n - p solar cell grown by metalorganic vapor phase epitaxy
1988; American Institute of Physics; Volume: 52; Issue: 8 Linguagem: Inglês
10.1063/1.99387
ISSN1520-8842
AutoresB-C. Chung, H. C. Hamaker, G. F. Virshup, J. G. Werthen,
Tópico(s)Chalcogenide Semiconductor Thin Films
Resumo1.93 eV AlxGa1−xAs (x=0.37) n-p solar cells with areas of 4 cm2 have been fabricated by metalorganic vapor phase epitaxy. Under 1 sun, air mass 1.5, simulated conditions, the cell exhibiting a conversion efficiency as high as 15% is characterized by a short-circuit current density of 12.0 mA/cm2, an open-circuit voltage of 1.42 V, and a fill factor of 0.87. The realization of these high-quality AlGaAs solar cells at a band gap of 1.93 eV implies the potential for other promising optoelectronic devices in the visible spectrum.
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