Reduced temperature dependence of the band gap in GaAs 1 − y N y investigated with photoluminescence
2002; American Physical Society; Volume: 65; Issue: 23 Linguagem: Inglês
10.1103/physrevb.65.235325
ISSN1095-3795
AutoresA. Polimeni, M. Bissiri, A. Augieri, G. Baldassarri Höger von Högersthal, M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, A. Forchel,
Tópico(s)Quantum and electron transport phenomena
ResumoThe effect of the temperature (T) on the band-gap energy ${(E}_{g})$ of hydrogenated ${\mathrm{GaAs}}_{1\ensuremath{-}y}{\mathrm{N}}_{y}/\mathrm{GaAs}$ quantum wells has been studied by photoluminescence from 10 to 540 K. Nitrogen insertion in GaAs leads to a sizable decrease of ${E}_{g}$ and to a flattening of the band-gap dependence on T with respect to that of bare GaAs. Atomic hydrogen irradiation passivates nitrogen in ${\mathrm{GaAs}}_{1\ensuremath{-}y}{\mathrm{N}}_{y}$ and leads to an increase of ${E}_{g},$ which is accompanied by an increase in the thermal shrinkage rate (S) of the band gap. Eventually, a strong correlation between S and the concentration of unpassivated N atoms is found. The wide temperature range investigated and the hydrogen induced effects permit to claim that the reduced thermal redshift of the gap in N containing samples: (i) cannot be ascribed to the reduction of the pressure coefficients in Ga(AsN); (ii) can be accounted for, instead, by a cancellation of the Debye-Waller and self-energy terms in the T dependence of the band gap. The latter effect is explained in terms of a recently proposed increase in the localized character of the conduction band edge with increasing N concentration.
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