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Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates

2007; Elsevier BV; Volume: 310; Issue: 5 Linguagem: Inglês

10.1016/j.jcrysgro.2007.11.137

1873-5002

A. Ougazzaden, David J. Rogers, F. Hosseini Téhérani, T. Moudakir, S. Gautier, T. Aggerstam, S. Ould Saad, J. Martin, Zakaria Djebbour, Olivier Durand, G. Garry, A. Lusson, D. McGrouther, J. N. Chapman,

ZnO doping and properties

The materials quality and availability of large-area bulk GaN substrates is currently considered a key problem for the continuing development of improved GaN-based devices. Since industrial fabrication of bulk GaN substrates with suitable materials quality has proven very difficult, the opto-GaN industry is currently based on heteroepitaxy using either c-sapphire or 6H SiC substrates. ZnO is promising as a substrate material for GaN because it has the same wurtzite structure and a relatively small lattice mismatch (∼1.8%). In this study, we have successfully grown GaN by MOVPE on ZnO-buffered c-sapphire. The growth conditions required to both prevent ZnO degradation and grow monocrystal thin film of GaN have been obtained. SEM, HRXRD and micro-Raman characterizations underlined the presence of the two layers GaN and ZnO with high structural quality.