Selective growth of InP buried structure by chloride vapor phase epitaxy
1986; American Institute of Physics; Volume: 48; Issue: 2 Linguagem: Inglês
10.1063/1.96938
ISSN1520-8842
AutoresM. Hoshino, Kazuhiro Tanaka, J. Komeno, Kuninori Kitahara, K. Kodama, Masashi Ozeki,
Tópico(s)Photonic and Optical Devices
ResumoSelective growth of an InP buried layer by In/PCl3/H2 vapor phase epitaxy was developed for buried layer GaInAsP/InP long wavelength laser diodes. For the first time, a completely flat-surface buried layer was grown into grooves with good morphology on a (100) exactly oriented InP substrate, but not on a (100) 2° off oriented substrate. We found that the side of the groove was covered with a buried InP layer in the early stage of epitaxial growth. Therefore, the present selective growth would be effective for the protection of the interface between the active and buried layers from thermal degradation. The resistivity of InP, measured by using an n-i-n structure, was found to be higher than 103 Ω cm at room temperature, which is sufficient for the buried layer of an usual laser diode.
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