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The stacking-fault energy in CuMn and CuAlMn alloys

1969; Taylor & Francis; Volume: 20; Issue: 166 Linguagem: Inglês

10.1080/14786436908228048

0031-8086

B. Pettersson,

Electronic Packaging and Soldering Technologies

Abstract Abstract The influence of Mn on the stacking-fault energy of Cu and three different CuAl alloys has been investigated by the node method. Accurate results oould only be obtained for the CuAIMn system. Mn is believed to contribute two electrons to the conduction band and thus each alloy has a certain number of valence electrons per atom. The positive contribution to the stacking-fault energy from the unfilled d states located at the Mn ions is believed to be roughly independent of both e/a ratio and the lattice parameter.