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Transport studies of SSe amorphous semiconductors

1983; Elsevier BV; Volume: 60; Issue: 2 Linguagem: Inglês

10.1016/0025-5416(83)90186-6

1873-4928

M. F. Kotkata, M. H. El-Fouly, A.Z. El-Behay, L.A. Wahab,

Thermal and Kinetic Analysis

The homogeneous glass-forming region for air-quenched melts in the binary chalcogenide system SSe is reported together with metastable melt crystallization temperatures and differential thermal analysis data for glass powder heated at different rates in a nitrogen atmosphere under standardized conditions. The compositional dependence of the electrical activation energy, the density and the glass transition temperature were measured in an effort to correlate the chemical binding with the physical properties. Myuller's valence theory of the electrical conductivity of glasses was applied to calculate the “steric factor” β defining the degree of departure of σ0(exp) from σ0(theor). A thermodynamic technique was used to study the devitrification process for different amorphous compositions of the system SSe. New data concerning the compositional dependence of the non-isothermal crystallization kinetics parameters are presented and discussed.