New n-Type Thermoelectric Oxide, Cd3TeO6
2002; Institute of Physics; Volume: 41; Issue: Part 2, No. 7A Linguagem: Inglês
10.1143/jjap.41.l780
ISSN1347-4065
AutoresYue Jin Shan, Katsuhiko SASAKI, Kazuhiro Sudo, Hideo Imoto, Mitsuru Itoh,
Tópico(s)Magnetic and transport properties of perovskites and related materials
ResumoElectron doping into Cd3TeO6 with a 1:1 ordered perovskite-type structure was carried out by two methods: the introduction of oxygen vacancies, and the atomic substitution of In for Cd. Both methods turned polycrystalline samples into metallic conductors while single crystals with metallic conductivity were obtained by the second method. The resistivity and thermoelectric power of the single-crystal indium-substituted sample were 0.6 mΩ·cm and -50 µV·K-1, respectively, giving a power factor of 4×10-4 W·K-2·m-1, which is the highest among nontransition metal oxides.
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