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Control of Intrinsic Defects in CuInSe 2 Films for Device Applications

2000; Institute of Physics; Volume: 39; Issue: S1 Linguagem: Inglês

10.7567/jjaps.39s1.149

1347-4065

Shigeru Niki, Ryoichi Suzuki, Syoji Ishibashi, Toshiyuki Ohdaira, Paul Fons, Akimasa Yamada, H. Ōyanagi, Takahiro Wada,

Copper-based nanomaterials and applications

Effects of Cu 2-x Se and air-annealing on the growth and properties of CuInSe 2 films have been investigated in terms of control of intrinsic defects. Enhanced two-dimensional growth and suppression of the Cu-Se divacancy formation (suppression of Se-vacancies) imply that under Cu-excess growth conditions a thin Cu-excess surface layer controls the growth of CuInSe 2 . The presence of the Cu-Se phase made possible to grow high-quality CuInSe 2 epitaxial films at temperatures well below the melting point of any Cu-Se compound. Post-growth air-annealing of the CuInSe 2 films showed a significant change in PL spectra and positron lifetime. A decrease in donor concentration and in positron lifetime indicated Se-vacancies were annihilated by oxygen. A decrease in twin density was simultaneously observed after the air-annealing; the control of Se-vacancy is a key issue to be addressed for improving the electrical and structural properties of CuInSe 2 films.