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Measurement of energy resolution and dead layer thickness of LN2-cooled PIN photodiodes

1992; Elsevier BV; Volume: 311; Issue: 1-2 Linguagem: Inglês

10.1016/0168-9002(92)90872-2

1872-9576

C. Weinheimer, M. Schrader, J. Bonn, Th. Loeken, H. Backe,

Neutrino Physics Research

Windowless silicon photodiodes of type Hamamatsu S172308 special and S3590-06 with dimensions 10 × 10 × 0.5 mm3 have been found to be suitable as detectors for 18.6 keV electrons from the endpoint region of the tritium β-spectrum at the Mainz neutrino rest mass experiment. To reduce the leakage current of the photodiode and the various temperature dependent noise contributions, the diode and the first stage of the charge sensitive preamplifier have been cooled with liquid nitrogen. At a temperature T = −97°C an energy resolution of 1.1 keV (FWHM) has been achieved for 60 keV γ-rays and 1.6 keV (FWHM) for 22 keV electrons. The density thickness product ϱχ of the dead layer of the entrance window has been determined by energy loss measurements of monoenergetic electrons to be 45 μg/cm2.