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Photoluminescence and structure properties of GaAs/ZnSe quantum wells

1992; American Institute of Physics; Volume: 60; Issue: 7 Linguagem: Inglês

10.1063/1.106493

1520-8842

Suian Zhang Suian Zhang, Nobuhiko P. Kobayashi,

GaN-based semiconductor devices and materials

By improving the quality of the GaAs well layer on a ZnSe barrier, we were able to observe the quantum size effect in photoluminescence of ZnSe/GaAs/ZnSe quantum wells. After solid phase epitaxy of 2-ML GaAs on ZnSe epilayer, migration-enhanced epitaxy (MEE) of the GaAs well layer was carried out while the growth temperature was elevated in steps. Photoluminescence from the obtained quantum wells has been appreciably improved by this method. The photoluminescence spectra show a systematic shift to higher energies as the well width is reduced, clearly demonstrating the size effect in the ZnSe-GaAs system. By comparing the experimental data with calculated emission energies, the valence-band and conduction-band discontinuities between ZnSe and GaAs in the 〈001〉 direction have been determined to be 1.27±0.02 and 0.03±0.02 eV, respectively.