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Effect of ion position on single-event transient current

1997; Elsevier BV; Volume: 130; Issue: 1-4 Linguagem: Inglês

10.1016/s0168-583x(97)00377-7

1872-9584

Toshio Hirao, I. Nashiyama, Tomihiro Kamiya, Tamotsu Suda, Takuro Sakai, Tsuyoshi Hamano,

Semiconductor materials and devices

Using focused high-energy microbeams of carbon- and oxygen-ions and a high speed, wide bandwidth measurement system, we found a strong dependence of the collected charge and the transient current waveform on the position of ion incidences. Single-event charge is collected by a diffusion mechanism even when the ion strikes a position about 3 ∼ 4 μm away from the lateral boundary of the p+n-junction area.