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Lift-off process for achieving fine-line metallization

1983; AIP Publishing; Volume: 1; Issue: 2 Linguagem: Inglês

10.1116/1.582632

2327-9877

Alvin A. Milgram,

3D IC and TSV technologies

A trilevel lift-off process using a soluble polyimide as the base layer is described. Al–Cu–Si metallizations are obtained with good pattern fidelity over 1 μm high structures with the use of substrate metallization temperatures of up to 325 °C. The process routinely produces metallizations 1 μm thick with linewidths less than 1.5 μm and pitch less than 2.5 μm.