High-power and high-brightness laser diode structures at 980 nm using Al-free materials
2002; SPIE; Volume: 4651; Linguagem: Inglês
10.1117/12.467936
ISSN1996-756X
AutoresM. Krakowski, Sophie-Charlotte Auzanneau, M. Calligaro, O. Parillaud, P. Collot, M. Lecomte, B. Boulant, T. Fillardet,
Tópico(s)Advanced Fiber Optic Sensors
ResumoHigh bit rate, WDM, networks use intensively Er or Er/Yb doped fibre amplifiers. Reliable, high power laser diodes at 980nm and 1480nm are key devices for pumping these amplifiers. We have developed different structures of laser diodes at 980nm, using Aluminium free materials. Our laser structure shows low optical losses together with a low threshold current density and a high external differential efficiency. We demonstrate a mini-bar of broad area laser diodes (emissive width of 2.6mm) with an optical output power of 19W at 25A under CW operation. We have also developed a mini-bar of small angle index guided tapered laser diodes (W=2.6mm). We demonstrate 17W at 27.6A under CW operation at 20 degree(s)C. Slow axis far field has a Gaussian single mode shape, with a FWHM of 3.3 degree(s) (at 15A, 11W), which is two times less than obtained on multimode broad area lasers. With such a device, we expect to couple 10W into a 100micrometers diameter fiber. We also demonstrate, on a large aperture gain-guided tapered laser, an output power of 1.3W with an M 2 of 3.3
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