Switching in elemental amorphous semiconductors
1970; Elsevier BV; Volume: 2; Linguagem: Inglês
10.1016/0022-3093(70)90123-7
ISSN1873-4812
Autores Tópico(s)Liquid Crystal Research Advancements
ResumoElectrical switching phenomenon in amorphous thin films of boron, silicon and germanium is described. The effect of temperature and shelf-life on the threshold and sustaining voltages has been studied. The threshold voltage decreases with increasing temperature while the sustaining voltage is approximately independent of temperature. Both the voltages do not vary significantly with shelf-life. A memory effect is observed in amorphous silicon.
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