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Bismuth Resists for EUV Lithography

2014; The Society of Photopolymer Science and Technology (SPST); Volume: 27; Issue: 5 Linguagem: Inglês

10.2494/photopolymer.27.655

1349-6336

James Passarelli, Miriam Sortland, Ryan Del Re, Brian Cardineau, Chandra Sarma, D. Freedman, Robert L. Brainard,

Electron and X-Ray Spectroscopy Techniques

We present the synthesis and preliminary lithographic evaluation of Molecular Organometallic Resists for EUV (MORE) that contain post-transition metals. These elements have high EUV optical density so they can utilize a large fraction of the incident photons. We will describe two technical approaches for EUV resist platforms that contain bismuth. Approach 1: Combination of organometallic compounds with photoacid generators. Approach 2: Combination of high-oxidation state metal-center oligomers that utilize carboxylate anions bound to the metal centers.