Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor
2008; American Institute of Physics; Volume: 93; Issue: 20 Linguagem: Inglês
10.1063/1.3026539
ISSN1520-8842
AutoresKosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono,
Tópico(s)Thin-Film Transistor Technologies
ResumoCu 2 O epitaxial films were grown for high mobility p-channel oxide thin-film transistors (TFTs). The use of a (110) MgO surface and fine tuning of a growth condition produced single phase epitaxial films with hole Hall mobilities ∼90 cm2 V−1 s−1 comparable to those of single crystals (∼100 cm2 V−1 s−1). TFTs using the epitaxial film channels exhibited p-channel operation although the field-effect mobilities and the on-to-off current ratio were not yet satisfactory (∼0.26 cm2 V−1 s−1 and ∼6, respectively).
Referência(s)