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Luminescence of direct-and indirect-gap electron-hole plasma in TlBr

1987; Elsevier BV; Volume: 62; Issue: 2 Linguagem: Inglês

10.1016/0038-1098(87)91122-7

1879-2766

V. Kohlová, I. Pelant, J. Hála, M. Ambrož, K. Vacek,

Semiconductor Quantum Structures and Devices

Abstract Luminescence of TlBr crystals highly excited by a nanosecond pulsed-dye laser (3.4 eV) at the bath temperature ∼ 8.5 K was studied. Two emission lines labeled A (∼ 2.98 eV) and B (∼ 2.62 eV) were found, which show typical behavior of the electron-hole plasma recombination radiation. The A-line is assigned to the recombination of e-h pairs in the direct gap ( X + 6 − X - 3 ) and the B-line to the simultaneous recombination in the indirect gap ( X + 6 − R - 6 ). Condensation of carriers into an electron-hole liquid was not observed.