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Microroughness Measurements on Polished Silicon Wafers

1992; Institute of Physics; Volume: 31; Issue: 3R Linguagem: Inglês

10.1143/jjap.31.721

1347-4065

Takao Abé, E. F. Steigmeier, Walter Hagleitner, Allan J. Pidduck,

Integrated Circuits and Semiconductor Failure Analysis

Six different techniques i.e. Stylus profilometry, Phase Shift Interferometry (PSI), Scanning Optical Microscopey in Differential Phase Contrast mode (SOM-DPC), Light Scattering Topography (LST), Scanning Tunneling Microscopy (STM) and Atomic Force Microscopy (AFM) have been used for measurements of silicon surface microroughness. Specimens with 4 different surface roughness levels have been prepared by variation of the mechanical or chemical components of a traditional polishing process. At low microroughness, a contradiction is observed between 2 groups: on one hand stylus and PSI, which sample the longer length scales from about 1 micron upwards, and STM and AFM on the other hand, which in this work sampled in the submicron range. The results of SOM-DPC and LST, which sample intermediate roughness scales, coincide with the latter group.