Time-resolved emission studies of GaAs/AlGaAs laser diode arrays on different heat sinks
1996; American Institute of Physics; Volume: 79; Issue: 2 Linguagem: Inglês
10.1063/1.360900
ISSN1520-8850
AutoresM. Voß, Ch. Lier, U. Menzel, A. Bärwolff, Thomas Elsaesser,
Tópico(s)Photonic and Optical Devices
ResumoLaser radiation from GaAs/AlGaAs laser diode arrays of high output power is studied during nano- to millisecond carrier injection in temporally and spectrally resolved emission measurements. A red shift of the multimode emission spectrum by up to 12 nm and a concomitant increase of the total bandwidth are caused by a transient rise of the device temperature by up to 50 K. Spatially resolved experiments reveal a lateral temperature difference of about 2 K between the center and the edge emitters. Different laser array/heat sink combinations are investigated in order to reduce the transient temperature increase.
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