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Impedance analysis of a radio-frequency single-electron transistor

2002; American Institute of Physics; Volume: 81; Issue: 17 Linguagem: Inglês

10.1063/1.1515883

1520-8842

Hai Du Cheong, T. Fujisawa, T. Hayashi, Y. Hirayama, Y. H. Jeong,

Advancements in Semiconductor Devices and Circuit Design

We investigate rf transport through an AlGaAs/GaAs single-electron transistor (SET). The presented rf–SET scheme provides a transmission coefficient proportional to the admittance of the device, which is desirable for impedance analysis as well as for high-sensitivity charge detection. The impedance of a SET, including the small tunneling capacitance, is successfully analyzed at the high frequency of 643 MHz, and is compared with a simple model. The ability to measure the impedance of a SET would expand the measurable regime of single-electron tunneling behavior.