Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps
2003; American Institute of Physics; Volume: 83; Issue: 5 Linguagem: Inglês
10.1063/1.1596375
ISSN1520-8842
AutoresC.‐K. Hu, L. Gignac, E. Liniger, B. Herbst, D.L. Rath, S. T. Chen, S. Kaldor, A. Simon, Wei‐Tsu Tseng,
Tópico(s)Semiconductor materials and devices
ResumoElectromigration in Cu Damascene lines with bamboo-like grain structures, either capped with Ta/TaN, SiNx, SiCxNyHz layers, or without any cap, was investigated. A thin Ta/TaN cap on top of the Cu line surface significantly improves electromigration lifetime when compared with lines without a cap and with lines capped with SiNx or SiCxNyHz. The activation energy for electromigration increased from 0.87 eV for lines without a cap to 1.0–1.1 eV for samples with SiNx or SiCxNyHz caps and to 1.4 eV for Ta/TaN capped samples.
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