Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material
2009; American Institute of Physics; Volume: 94; Issue: 4 Linguagem: Inglês
10.1063/1.3077202
ISSN1520-8842
AutoresE. Antolín, Antonio Martı́, J. Olea, David Pastor, G. González-Dı́az, I. Mártil, A. Ĺuque,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoThe doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR for ultrahigh DL dilutions as a result of the delocalization of the impurity electron wave functions. Carrier lifetime measurements on Si wafers doped with Ti in the 1020–1021 cm−3 concentration range show an increase in the lifetime, in agreement with the NRR suppression predicted and contrary to the classic understanding of DL action.
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