Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers
2012; Institute of Electrical and Electronics Engineers; Volume: 33; Issue: 12 Linguagem: Inglês
10.1109/led.2012.2218272
ISSN1558-0563
AutoresA. Kamath, Tarkeshwar C. Patil, R. Adari, Indranil Bhattacharya, Swaroop Ganguly, Rabah W. Aldhaheri, Mohammad Asif Hussain, Dipankar Saha,
Tópico(s)Ga2O3 and related materials
ResumoWe have developed a double-channel high electron mobility transistor with back barriers for carrier confinement. We have observed that the double-channel devices may suffer from the lack of gate control particularly for the lower channel. However, the problem can be contained by using a suitable back barrier for the lower channel. The double-channel back-barrier devices show good current gain and power gain cutoff frequencies. These devices can be operated with excellent gain linearity up to a larger value for input power and frequency.
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