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Sub-5keV electron-beam lithography in hydrogen silsesquioxane resist

2011; Elsevier BV; Volume: 88; Issue: 10 Linguagem: Inglês

10.1016/j.mee.2011.05.024

1873-5568

Vitor R. Manfrinato, Lin Lee Cheong, Huigao Duan, Donny Winston, Henry I. Smith, Karl K. Berggren,

Advanced Surface Polishing Techniques

We fabricated 9–30 nm half-pitch nested Ls and 13–15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested Ls and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between experimental and Monte-Carlo-simulated point-spread functions at energies of 1.5, 2, and 3 keV. The long-range proximity effect was minimal, as indicated by simulated and patterned 30 nm holes in negative-tone resist.