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Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

2012; American Institute of Physics; Volume: 100; Issue: 14 Linguagem: Inglês

10.1063/1.3700729

1520-8842

Yu-Chung Lien, Jia‐Min Shieh, Wen-Hsien Huang, C. H. Tu, Chieh Wang, Chang-Hong Shen, Bau‐Tong Dai, Ci‐Ling Pan, Chenming Hu, Fu-Liang Yang,

Integrated Circuits and Semiconductor Failure Analysis

The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 μs under low operating voltages of ± 7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM.