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Room temperature X-ray spectroscopy with a silicon diode detector and an ultra low noise preamplifier

1994; Institute of Electrical and Electronics Engineers; Volume: 41; Issue: 4 Linguagem: Inglês

10.1109/23.322776

1558-1578

G. Bertuccio, A. Pullia,

Nuclear Physics and Applications

An X-ray spectrograph operating at room-temperature has been designed and tested. It consists of a small area (1 mm/sup 2/) silicon diode detector on a high resistivity bulk and an ultra low noise preamplifier of new conception. A resolution of 61 RMS electrons (517 eV FWHM) was measured at 297 K, 34 RMS electrons (288 eV FWHM) at 223 K. The limits and perspectives for room temperature operation of silicon planar diode detectors and related front-end electronics are highlighted. >