GaN-based magnetic semiconductors for nanospintronics
2004; IOP Publishing; Volume: 16; Issue: 48 Linguagem: Inglês
10.1088/0953-8984/16/48/011
ISSN1361-648X
AutoresH. Asahi, Ying Zhou, Masahiko Hashimoto, M S Kim, X J Li, Shūichi Emura, Shigehiko Hasegawa,
Tópico(s)Ga2O3 and related materials
ResumoGaN-based magnetic semiconductors are expected to exhibit ferromagnetism even at high temperatures. We have studied the magnetic and optical properties of transition-metal- and rare-earth-doped GaN. GaCrN showed ferromagnetic characteristics at 7–400 K. Clear hysteresis and clear saturation were observed in the magnetization versus magnetic field (M–H) curves at all measuring temperatures. We observed photoluminescence (PL) emission from GaCrN layers. GaGdN also showed ferromagnetic characteristics at 7–400 K. Sharp PL emission was observed for GaGdN. X-ray diffraction and EXAFS measurements showed no phase separation, and that the Cr and Gd atoms substitute Ga sites. Applications to novel devices controlling charges (electrons and holes), spins and photons are expected.
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