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Studies on dislocation patterning in 6‐inch GaAs crystals

2007; Wiley; Volume: 4; Issue: 8 Linguagem: Inglês

10.1002/pssc.200675439

1862-6351

P. Rudolph, Ch. Frank‐Rotsch, Uta Juda, S. Eichler, M. Scheffer‐Czygan,

Solidification and crystal growth phenomena

Abstract The present paper investigates the correlations between the cell dimension d of characteristic dislocation cell patterns and acting thermo‐elastic stress τ at the growth of 6‐inch semi‐insulating VCz and VGF GaAs crystals. Whereas the dislocation density and cells are analysed experimentally the history of the elastic stress, responsible for the cell formation, is obtained by global numeric calculation. At stresses below 1 MPa diffusion‐controlled creep is the dominant mechanism of dislocation motion. Different d ( τ ) ‐ proportionalities in VCz and VGF crystals are determined. This is due to the varying thermal conditions and stay times of the growing crystal at high temperatures. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)