Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor
2004; Institution of Engineering and Technology; Volume: 40; Issue: 21 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresJ. Zhang, J.H. Zhao, P. Alexandrov, T. Burke,
Tópico(s)Copper Interconnects and Reliability
ResumoThe first demonstration is reported of a high-voltage (9.2 kV) 4H-SiC bipolar junction transistor (BJT) based on a 50 µm, 7×1014 cm−3 doped drift layer, achieving an emitter current density of 150 A/cm2 at VCEO=5 V, suggesting a specific on-resistance (RSP_ON) of 33 mΩ cm2 without considering current spreading or 49 mΩ cm2 if current spreading is considered. The result far exceeds the previous 4H-SiC BJT record of 3.2 kV with RSP_ON=78 mΩ cm2.
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