Spatial Distribution and Surface Loss of CF 3 and CF 2 Radicals in a CF 4 Etching Plasma
1993; Institute of Physics; Volume: 32; Issue: 3A Linguagem: Inglês
10.1143/jjap.32.l353
ISSN1347-4065
AutoresYukinobu Hikosaka, Hirotaka Toyoda Hirotaka Toyoda, Hideo Sugai Hideo Sugai,
Tópico(s)Mass Spectrometry Techniques and Applications
ResumoThe absolute number density and the spatial distribution of CF 3 and CF 2 radicals in a radio-frequency CF 4 plasma were measured using threshold-ionization mass spectrometry. The time constant of density decay in an afterglow was measured to be almost independent of pressures (15-100 mTorr) and rf powers (10-100 W). This suggests that surface reactions rather than gas phase reactions may primarily be responsibile for the radical loss. The surface loss probability s of CF 3 and CF 2 radicals was estimated in this well-defined system to be s =0.012 and 0.014, respectively.
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