Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C
2006; Institute of Electrical and Electronics Engineers; Volume: 27; Issue: 2 Linguagem: Inglês
10.1109/led.2005.863147
ISSN1558-0563
AutoresK. Long, A.Z. Kattamis, I‐Chun Cheng, H. Glesková, S. Wagner, James C. Sturm,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoAmorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T/sub g/) of >315/spl deg/ C and low coefficient of thermal expansion of <10 ppm/ /spl deg/ C. Maximum process temperatures on the substrates were 250/spl deg/C and 280/spl deg/C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280/spl deg/C have dc characteristics comparable to TFTs made on glass. The stability of the 250/spl deg/C TFTs on clear plastic is approaching that of TFTs made on glass at 300/spl deg/C-350/spl deg/C. TFT characteristics and stability depend only on process temperature and not on substrate type.
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