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Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)

2005; Elsevier BV; Volume: 124-125; Linguagem: Inglês

10.1016/j.mseb.2005.08.062

1873-4944

Koji Usuda, Toshinori Numata, Toshifumi Irisawa, Norio Hirashita, Shinichi Takagi,

Semiconductor materials and devices

SOI MOSFETs are attractive device structures for high-performance CMOS because they offer the advantages of high-speed and low-power-dissipation operation. For next-generation devices, the combination of strained-Si channels and SOI substrates can be the optimum structure and, thus, we have developed strained-Si MOSFETs on thin relaxed SiGe-on-insulator (SGOI) substrates. However, the strain evaluation within the very thin and small SOI layers after device fabrication processes has not been investigated in detail yet because a strain evaluation method with lateral resolution of several nm, which can be applied directly to samples, has not been available. In this paper, we present a direct and two-dimensional strain evaluation with high spatial resolution using the nano-beam electron diffraction (NBD) method and results of direct strain measurements for conventional SOI and strained-Si on SGOI MOSFET channels.