Strong influence of buffer layer type on carbon nanotube characteristics
2003; Elsevier BV; Volume: 42; Issue: 1 Linguagem: Inglês
10.1016/j.carbon.2003.10.020
ISSN1873-3891
AutoresTeresa de los Arcos, M. G. Garnier, Peter Oelhafen, Daniel Mathys, Jin Won Seo, Concepción Domingo, José Vicente Garcı́a-Ramos, Santiago Sánchez‐Cortés,
Tópico(s)Diamond and Carbon-based Materials Research
ResumoCarbon nanotubes (CNTs) have been grown by chemical vapor deposition in a vacuum chamber equipped with in situ photoelectron spectroscopy technique that allows for precise characterization of the chemical state of substrate and catalyst before the CNTs growth. The CNTs were grown onto Si wafers covered with thin buffer layers of Al, Al2O3, TiN, and TiO2, using Fe as catalyst. Marked differences were observed both in growth rate and nanotube characteristics, as determined by SEM, TEM and micro-Raman spectroscopy, depending on the choice of buffer layer.
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