Electrical properties of PMMA ion-implanted with low-energy Si + beam
2010; IOP Publishing; Volume: 207; Linguagem: Inglês
10.1088/1742-6596/207/1/012022
ISSN1742-6596
AutoresGeorgi B. Hadjichristov, V.K. Gueorguiev, T. Ivanov, Yordan G. Marinov, Victor G. Ivanov, E. Faulques,
Tópico(s)Ion-surface interactions and analysis
ResumoThe electrical properties of polymethylmethacrylate (PMMA) after implantation with silicon ions accelerated to an energy of 50 keV are studied under DC electric bias field. The electrical response of the formed material is examined as a function of Si+ fluence in the range 1014 − 1017 cm−2. The carbonaceous subsurface region of the Si+-implanted PMMA displays a significant DC conductivity and a sizable field effect that can be used for electronic applications.
Referência(s)