Development of a 756 nm, 3 W injection-locked cw Ti:sapphire laser
2005; Optica Publishing Group; Volume: 44; Issue: 36 Linguagem: Inglês
10.1364/ao.44.007810
ISSN0003-6935
AutoresYong Ho, Yong Woo Lee, Kwang-Hoon Ko, Euo Chang Jung, Gwon Lim, Jae Woo Kim, Taek‐Soo Kim, Do-Young Jeong,
Tópico(s)Laser Design and Applications
ResumoWe have developed a 756 nm, 3 W single-frequency cw Ti:sapphire laser by using the technique of injection locking. A cw Ti:sapphire laser in a ring-type configuration was forced to lase unidirectionally by use of an optical diode to prevent a high-power backward laser from disturbing the injection laser. A master laser was amplified by a broad-area laser diode and coupled into a single-mode fiber to generate a 50 mW injection laser with a Gaussian beam profile, which was enough to lock the Ti:sapphire laser at full power of 3 W. Such a high-power single-frequency Ti:sapphire laser enables a watt-level blue or near-ultraviolet single-frequency laser to be generated by frequency doubling.
Referência(s)