Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions
2005; American Institute of Physics; Volume: 86; Issue: 11 Linguagem: Inglês
10.1063/1.1880446
ISSN1520-8842
AutoresAndreas Löffler, Johann Peter Reithmaier, G. Sęk, C. Hofmann, Stephan Reitzenstein, M. Kamp, A. Forchel,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoVertical-emitting AlAs∕GaAs microcavity pillars with a type of GaInAs quantum dots within a one λ cavity have been realized based on high reflectivity distributed Bragg reflectors. High-quality factors were achieved due to an improved fabrication technology with a maximum quality factor of 27 700 for a micropillar with a diameter of 4μm. The dot dimensions could be enlarged by one order of magnitude using a low strain Ga0.7In0.3As nucleation layer.
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