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Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2

2000; Elsevier BV; Volume: 69-70; Linguagem: Inglês

10.1016/s0921-5107(99)00290-1

1873-4944

S. Lombardo, S. Coffa, Corrado Bongiorno, C. Spinella, E. Castagna, Antonella Sciuto, C. Gerardi, Fábio Ferrari, Barbara Fazio, S. Privitera,

Semiconductor materials and interfaces

We have investigated the electrical transport and luminescence of Si dots embedded in SiO2. The dots have been obtained by high temperature annealing of silicon rich oxides prepared by chemical vapor deposition. Transmission electron microscopy analysis demonstrates the presence of crystalline Si dots with grain radii down to 1 nm. The data of luminescence and electrical transport appear correlated with the dot size distribution. Moreover, the analysis of the electrical characteristics of metal-oxide–semiconductor capacitors with silicon rich oxide films indicates that such systems may reversibly store charge, thus exhibiting the function of a memory.